umt2222a / sst2222a / mmst2222a transistors rev.a npn medium power transistor (switching) umt2222a / sst2222a / mmst2222a z features 1) bv ceo > 40v (i c = 10ma) 2) complements the umt2907a / sst2907a / mmst2907a. z package, marking, and packaging specifications part no. umt2222a umt3 r1p t106 3000 sst2222a sst3 r1p t116 3000 mmst2222a smt3 r1p t146 3000 packaging type marking code basic ordering unit (pieces) z absolute maximum ratings (ta = 25 c) parameter symbol v cbo v ceo v ebo i c tj tstg limits 75 40 6 0.6 0.35 150 ? 55 to + 150 unit v v v a w w p c 0.2 sst2222a umt2222a,sst2222a, mmst2222a c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? ? when mounted on a 7 x 5 x 0.6 mm ceramic board z dimensions (unit : mm) rohm : umt3 eiaj : sc-70 (1) emitter (2) base (3) collector rohm : sst3 (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 (1) emitter (2) base (3) collector umt2222a sst2222a mmst2222a z electrical characteristics (ta = 25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo 75 40 6 ? ? ? ? ? ? ? ? ? ? 100 100 v v v na na i c = 10a i c = 10ma i e = 10a v cb = 60v v eb = 3v ?? 2 v be(sat) 0.6 ? 1.2 v ?? 1i c /i b = 500ma/50ma v ce(sat) ?? 0.3 v i c /i b = 150ma/15ma i c /i b = 500ma/50ma i c /i b = 150ma/15ma 40 ?? 50 ?? ? h fe 75 ?? 50 ?? 35 ?? v ce = 10v , i c = 0.1ma v ce = 10v , i c =1 ma v ce = 10v , i c = 10ma v ce = 1v , i c = 150ma 100 ? 300 v ce = 10v , i c = 150ma v ce = 10v , i c = 500ma f t cob 300 ? ? ? ? 8 mhz pf v ce = 20v , i c =? 20ma, f = 100mhz v cb = 10v , f = 100khz cib ?? 25 pf v eb = 0.5v , f = 100khz td ?? 10 ns v cc = 30v , v be(off) = 0.5v , i c = 150ma , i b1 = 15ma v cc = 30v , v be(off) = 0.5v , i c = 150ma , i b1 = 15ma tr ?? 25 ns tstg ?? 225 ns v cc = 30v , i c = 150ma , i b1 =? i b2 = 15ma v cc = 30v , i c = 150ma , i b1 =? i b2 = 15ma tf ?? 60 ns collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current base-emitter saturation voltage collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance emitter input capacitance delay time rise time storage time fall time 1/3
umt2222a / sst2222a / mmst2222a transistors rev.a z electrical characteristic curves 0 50 100 10 0 5 i b =0a 100 200 400 500 600 300 ta=25c collector current : ic (ma) collector-emitter voltage : v ce (v) fig.1 grounded emitter output characteristics 0.1 10 1.0 100 1000 100 1000 10 dc current gain : h fe collector current : ic(ma) ta =25c v ce = 10v 1v fig.3 dc current gain vs. collector current() 1.0 10 100 1000 0.2 0.3 0.1 0 collector emitter saturation voltage : v ce(sat) (v) collector current : ic(ma) ta=25c i c / i b =10 fig.2 collector-emitter saturation voltage vs. collector current 0.1 10 1.0 100 1000 100 1000 10 dc current gain : h fe collector current : ic( ma) ta =125c v ce = 10 v 25 c ?55 c fig.4 dc current gain vs. collector current(?) 0.1 10 1.0 100 1000 100 1000 10 ac current gain : h fe collector current : ic( ma) ta =25c v ce = 10 v f = 1khz fig.5 ac current gain vs. collector current 1.0 10 100 1000 0.8 1.2 1.8 1.6 0.4 0 base emitter saturation voltage : v be(sat) (v) collector current : ic (ma) ta =25c i c / i b = 10 fig.6 base-emitter saturation voltage vs. collector current 2/3
umt2222a / sst2222a / mmst2222a transistors rev.a 1 10 100 1000 0.8 1.2 1.8 1.6 0.4 0 base emitter voltage : v be(on) (v) collector current : ic(ma) ta =25c v ce = 10v fig.7 grounded emitter propagation characteristics 1.0 10 100 1000 100 1000 10 turn on time : ton (ns) collector current : ic(ma) ta =25c i c / i b = 10 v cc = 30v 10 v fig.8 turn-on time vs. collector current 1.0 10 100 1000 100 500 5 10 rise time : tr (ns) collector current : ic (ma) ta =25c v cc = 30v i c / i b = 10 fig.9 rise time vs. collector current 1.0 10 100 1000 100 1000 10 storage time : ts (ns) collector current : ic (ma) ta =25c v cc = 30v i c = 10i b1 = 10i b2 fig.10 storage time vs. collector current 1.0 10 100 1000 100 1000 10 fall time : tf(ns) collector current : ic (ma) ta =25c v cc = 30v i c = 10i b1 = 10i b2 fig.11 fall time vs. collector current 0.1 1.0 10 100 10 100 1 capacitance (pf) reverse bias voltage (v) ta =25c f = 1mhz cib cob fig.12 input / output capacitance vs. voltage 1 10 100 1000 10 1 100 0.1 collector-emitter voltage : v ce (v) collector current : ic (ma) ta =25c 100mhz 200mhz 250mhz 300mhz 250mhz fig.13 gain bandwidth product 1.0 10 100 1000 100 1000 10 current gain-bandwidth product (mhz) collector current : ic (ma) ta =25c v ce = 10v fig.14 gain bandwidth product vs. collector current 3/3
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / eupope / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2007 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21, saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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